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Panasonic Electronic Components Datasheet

2SC5128 Datasheet

Silicon NPN triple diffusion planar type

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2SC5128 pdf
Power Transistors
2SC5128
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Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
800
800
500
8
10
5
3
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 800V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 2A
IC = 2A, IB = 0.4A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,
VCC = 200V
min typ max Unit
100 µA
100 µA
500 V
15
8
1.0 V
1.5 V
20 MHz
1.0 µs
3.0 µs
0.3 µs
1


Panasonic Electronic Components Datasheet

2SC5128 Datasheet

Silicon NPN triple diffusion planar type

No Preview Available !

2SC5128 pdf
Power Transistors
60
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
25˚C
1
TC=–25˚C
100˚C
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
6
TC=25˚C
5 IB=800mA
700mA
600mA
500mA
4 400mA
300mA
3 200mA
100mA
2
50mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
1000
300
100
30
10
hFE — IC
VCE=5V
TC=100˚C
25˚C
–25˚C
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
ton
0.3
tf
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
2SC5128
VCE(sat) — IC
100
IC/IB=5
30
10
25˚C
3
1
0.3
0.1 TC=–25˚C
0.03 100˚C
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT — IC
100
VCE=10V
f=1MHz
30 TC=25˚C
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
30
ICP
10
IC
3
1 10ms
DC
t=0.5ms
1ms
0.3
0.1
0.03
0.01
Non repetitive pulse
0.003 TC=25˚C
1 3 10
30
100 300 1000
Collector to emitter voltage VCE (V)
2


Part Number 2SC5128
Description Silicon NPN triple diffusion planar type
Maker Panasonic Semiconductor
Total Page 3 Pages
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