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Panasonic Electronic Components Datasheet

D1267 Datasheet

2SD1267

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D1267 pdf
Power Transistors
2SD1267, 2SD1267A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB942 and 2SB942A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1267
base voltage 2SD1267A
VCBO
60
80
V
Collector to 2SD1267
emitter voltage 2SD1267A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
8
4
40
2
V
A
A
W
Junction temperature
Storage temperature
Tj 150 ˚C
Tstg –55 to +150 ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1267
current
2SD1267A
Collector cutoff
2SD1267
current
2SD1267A
Emitter cutoff current
Collector to emitter 2SD1267
voltage
2SD1267A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCB = 60V, VBE = 0
VCB = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 0.4A, IB2 = – 0.4A,
VCC = 50V
*hFE1 Rank classification
wRawnkw.DataQSheet4UP.com
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
400
µA
400
700
µA
700
1 mA
60
V
80
70 250
15
2V
1.5 V
20 MHz
0.4 µs
1.2 µs
0.5 µs
1


Panasonic Electronic Components Datasheet

D1267 Datasheet

2SD1267

No Preview Available !

D1267 pdf
Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
6
TC=25˚C
5 IB=150mA
100mA
4 80mA
60mA
3 40mA
30mA
2 20mA
10mA
1
5mA
0
0 4 8 12 16 20
Collector to emitter voltage VCE (V)
2SD1267, 2SD1267A
IC — VBE
8
7 25˚C
6 TC=100˚C –25˚C
VCE=4V
5
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1 TC=100˚C
0.3 25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=4V
300
TC=100˚C
100
–25˚C
30
25˚C
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=10V
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
0.3
t=1ms
10ms
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Part Number D1267
Description 2SD1267
Maker Panasonic Semiconductor
Total Page 2 Pages
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