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Panasonic Electronic Components Datasheet

D1457 Datasheet

2SD1457

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D1457 pdf
Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
www.DataSheet4U.com
For power amplification
Unit: mm
s Features
q High foward current transfer ratio hFE
q High collector to base voltage VCBO
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to 2SD1457
emitter voltage 2SD1457A
VCBO
VCEO
200
150
200
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
5
10
6
60
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
VCEO(sus)
VEBO
hFE*
VCE(sat)
VBE(sat)
fT
VCB = 200V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 0.5A, f = 1MHz
min typ max Unit
100 µA
150 V
5V
700 10000
1.5 V
2.5 V
15 MHz
*hFE Rank classification
Rank
Q
P
O
hFE 700 to 2500 2000 to 5000 4000 to 10000
1


Panasonic Electronic Components Datasheet

D1457 Datasheet

2SD1457

No Preview Available !

D1457 pdf
Power Transistors
100
80
(1)
60
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(PC=3.0W)
40
20
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
IC — VCE
5
TC=25˚C
4
IB=2.0mA
1.8mA
1.6mA
3
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
2
0.4mA
0.2mA
1
0
0123456
Collector to emitter voltage VCE (V)
2SD1457, 2SD1457A
VCE(sat) — IC
100 www.DataSheet4U.com
IC/IB=50
30
10
3
25˚C
1 TC=100˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
VBE(sat) — IC
100
IC/IB=50
30
10
3
TC=–25˚C
1
100˚C
0.3
25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
100000
30000
10000
hFE — IC
VCE=2V
3000 TC=100˚C
1000
300
100
25˚C
–25˚C
30
10
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
TC=25˚C
300
100
30
10
3
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
30
10 ICP
IC
3
1
20ms
Non repetitive pulse
TC=25˚C
t=1ms
0.1ms
3ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
10 (2)
1
10–1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2


Part Number D1457
Description 2SD1457
Maker Panasonic Semiconductor
Total Page 2 Pages
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