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BC807W Datasheet Preview

BC807W Datasheet

PNP general purpose transistor

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BC807W pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D187
BC807W
PNP general purpose transistor
Product specification
Supersedes data of 1997 Jun 09
1999 May 18



Philips
Philips

BC807W Datasheet Preview

BC807W Datasheet

PNP general purpose transistor

No Preview Available !

BC807W pdf
Philips Semiconductors
PNP general purpose transistor
Product specification
BC807W
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complement: BC817W.
handbook, halfpage
3
3
MARKING
TYPE
NUMBER
BC807W
BC807-16W
MARKING
CODE(1)
5D
5A
TYPE
NUMBER
BC807-25W
BC807-40W
MARKING
CODE(1)
5B
5C
Note
1. = - : Made in Hong Kong.
= t : Made in Malaysia.
1
Top view
1
2
MAM048
2
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base; IC = 10 mA
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
50
45
5
500
1
200
200
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 May 18
2


Part Number BC807W
Description PNP general purpose transistor
Maker Philips
Total Page 8 Pages
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