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Philips
Philips

PSMN070-200B Datasheet Preview

PSMN070-200B Datasheet

N-channel TrenchMOS transistor

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PSMN070-200B pdf
DISCRETE SEMICONDUCTORS
DATA SHEET
PSMN070-200B; PSMN070-200P
N-channel TrenchMOS(TM)
transistor
Product specification
August 1999



Philips
Philips

PSMN070-200B Datasheet Preview

PSMN070-200B Datasheet

N-channel TrenchMOS transistor

No Preview Available !

PSMN070-200B pdf
Philips Semiconductors
Product specification
N-channel TrenchMOS(TM) transistor PSMN070-200B; PSMN070-200P
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 35 A
RDS(ON) 70 m
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN070-200P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN070-200B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
35
25
140
250
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
2
Rev 1.000


Part Number PSMN070-200B
Description N-channel TrenchMOS transistor
Maker Philips
Total Page 12 Pages
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PSMN070-200B pdf
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