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Polyfet RF Devices
Polyfet RF Devices

F1002 Datasheet Preview

F1002 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1002 pdf
polyfet rf devices
F1002
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
40 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
80 Watts
1.95 oC/W
200 oC
-65 oC to 150oC
4A
70 V
70 V 30V
RF CHARACTERISTICS ( 40WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
15
dB Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz
η Drain Efficiency
60 % Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.4 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Curren
2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.2 A, Vgs = Vds
gM Forward Transconductanc
1.6
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8A
Idsat
Saturation Curren
11
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
66 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
8 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
40 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1002 Datasheet Preview

F1002 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1002 pdf
POUT VS PIN GRAPH
F1002
CAPACITANCE VS VOLTAGE
60
50
40
30
20
10
0
0
F1002 POUT vs PIN Idq= 0.4A F=175 Mhz VDS = 28V
EFFICIENCY = 75%
0.5 1 1.5 2 2.5 3
PIN IN WATTS
POUT
GAIN
18
17
16
15
14
13
12
11
10
3.5
IV CURVE
F1B 2 DICE CAPACITANCE
1000
100
Coss
Ciss
10 Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
12
10
8
6
4
2
0
0
2
Vg = 2V
F1B 2 DICE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1B 2 DIE GM & ID vs VGS
100
10 Id
1
Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1002
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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