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Polyfet RF Devices
Polyfet RF Devices

F1018 Datasheet Preview

F1018 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1018 pdf
polyfet rf devices
F1018
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
80 Watts Push - Pull
Package Style AD
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
290 Watts
0.6 oC/W
200 oC
-65 oC to 150oC
12 A
70 V
70 V 30V
RF CHARACTERISTICS ( 80WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 1.2 A, Vds = 28.0 V, F = 500 MHz
η Drain Efficiency
60 % Idq = 1.2 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.2 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.15 A, Vgs = 0V
Idss Zero Bias Drain Curren
3 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.3 A, Vgs = Vds
gM Forward Transconductanc
2.4
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.5
Ohm
Vgs = 20V, Ids = 12 A
Idsat
Saturation Curren
16.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
99 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
12
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
60 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1018 Datasheet Preview

F1018 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1018 pdf
POUT VS PIN GRAPH
F1018
CAPACITANCE VS VOLTAGE
140
120
100
80
60
40
20
0
0
F-1018 POUT vs PIN F=500 MHZ; IDQ=1.2A; VDS=28V
GAIN
POUT
5 10 15 20
PIN IN WATTS
POUT
GAIN
IV CURVE
15
14
13
12
11
10
9
8
7
6
25
F1B 3DIE CAPACITANCE
1000
100
Coss
Ciss
10
0
Crss
5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
20
18
16
14
12
10
8
6
4
2
0
0
F1B 3DIE IV CURVE
246
Vg = 2V
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
F1B 3 DIE GM & ID vs VG
100
Id
10
1
Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1018
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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F1018 pdf




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