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Polyfet RF Devices
Polyfet RF Devices

F1019 Datasheet Preview

F1019 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1019 pdf
polyfet rf devices
F1019
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
40 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
170 Watts
1.05 oC/W
200 oC
-65 oC to 150oC
8A
70 V
70 V 30V
RF CHARACTERISTICS ( 40WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.1 A, Vgs = 0V
Idss Zero Bias Drain Curren
2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.2 A, Vgs = Vds
gM Forward Transconductanc
1.6
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.7
Ohm
Vgs = 20V, Ids = 8A
Idsat
Saturation Curren
11
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
66 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
8 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
40 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1019 Datasheet Preview

F1019 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1019 pdf
POUT VS PIN GRAPH
F1019
CAPACITANCE VS VOLTAGE
70
60
50
40
30
20
10
0
0
F1019 POUT vs PIN Idq=0.8A F=400 Mhz Vds=28v
GAIN
POUT
Efficiency = 50%
0.5 1 1.5 2 2.5 3 3.5 4 4.5
PIN IN WATTS
POUT
GAIN
17
16
15
14
13
12
11
10
5
IV CURVE
F1B 2 DICE CAPACITANCE
1000
100
Coss
Ciss
10 Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
12
10
8
6
4
2
0
0
2
Vg = 2V
F1B 2 DICE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1B 2 DIE GM & ID vs VGS
100
10 Id
1
Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1019
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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