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Polyfet RF Devices
Polyfet RF Devices

F1034 Datasheet Preview

F1034 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1034 pdf
polyfet rf devices
F1034
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
5 Watts Single Ended
Package Style AA
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
20 Watts
10 oC/W
200 oC
-65 oC to 150oC
0.8 A
70 V
70 V 30V
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN TYP
Gps Common Source Power Gai
14
η Drain Efficiency
45
VSWR Load Mismatch Toleranc
5WATTS OUTPUT )
MAX UNITS TEST CONDITIONS
dB Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
% Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
20:1 Relative Idq = 0.2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.01 A, Vgs = 0V
Idss Zero Bias Drain Curren
0.2 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids =0.02 A, Vgs = Vds
gM Forward Transconductanc
0.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
3.5
Ohm
Vgs = 20V, Ids = 1A
Idsat
Saturation Curren
1.2
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
9 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
1 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
6 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1034 Datasheet Preview

F1034 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1034 pdf
POUT VS PIN GRAPH
F1034
100
CAPACITANCE VS VOLTAGE
F2A 1 DIE CAPACITANCE VS VDS
IV CURVE
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
2
VGS = 2V
F2A 1 DIE IV CURVE
46
VGS = 4V
8 10 12
VDS IN VOLTS
VGS = 6V
VGS = 8V
14 16
VGS = 10V
18 20
VGS 12V
S11 AND S22 SMITH CHART
10 Ciss
Coss
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
F2A 1 DIE GM & ID vs VGS
10
1 Id
0.1 Gm
0.01
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1034
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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F1034 pdf




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