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Polyfet RF Devices
Polyfet RF Devices

F1058 Datasheet Preview

F1058 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1058 pdf
polyfet rf devices
F1058
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
30 Watts Push - Pull
Package Style AQ
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
100 Watts
1.75 oC/W
200 oC
-65 oC to 150oC
4A
70 V
70 V 30V
RF CHARACTERISTICS ( 30WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
13
dB Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Curren
1 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forward Transconductanc
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
1
Ohm
Vgs = 20V, Ids = 4A
Idsat
Saturation Curren
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1058 Datasheet Preview

F1058 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1058 pdf
POUT VS PIN GRAPH
F1058
CAPACITANCE VS VOLTAGE
F1058 POUT vs PIN FREQ = 400 MHZ,
IDQ = 0.4A, VDS=28V
60 18
50 16
40 14
30 12
20 10
10 8
06
0 2 4 6 8 10 12 14
Pin in Watts
Pout Gain
IV CURVE
F1B 1 DIE Capacitance vs Vds
100
Coss
Ciss
10
Crss
1
0 5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
6
5
4
3
2
1
0
02
Vg = 2V
F1B 1DIE IV CURVE
46
Vg = 4V
8 10 12 14 16
Vds in Volts
Vg = 6V
Vg = 8V
Vg = 10V
18 20
Vg = 12V
F1B 1 DIE GM & ID vs VG
10
Id
1
Gm
0.1
0.01
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1058
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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