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Polyfet RF Devices
Polyfet RF Devices

F1120 Datasheet Preview

F1120 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1120 pdf
polyfet rf devices
F1120
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Military Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
200 Watts Gemini
Laser Driver and others.
"Polyfet"TM process features
Package Style AR
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
HIGH GAIN, LOW NOISE
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
440 Watts
0.4 oC/W
200 oC
-65 oC to 150oC
20 A
70 V
70 V 30V
RF CHARACTERISTICS ( 200 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 2 A, Vds = 28.0 V, F = 175 MHz
η
VSWR
Drain Efficienc
Load Mismatch Toleranc
55 % Idq = 2 A, Vds = 28.0 V, F = 175 MHz
20:1 Relative Idq = 2 A, Vds = 28.0 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.25 A, Vgs = 0V
Idss Zero Bias Drain Curren
5 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.5 A, Vgs = Vds
gM Forward Transconductanc
5 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.18
Ohm
Vgs = 20V, Ids = 20 A
Idsat
Saturation Curren
30
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
200 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
25 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
150 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1120 Datasheet Preview

F1120 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1120 pdf
F1120
POUT VS PIN GRAPH
F1120 POUT VS PIN F=175
MHZ; IDQ=2.0A; VDS=28.0V
250 18.00
17.00
200
16.00
150
100
Efficiency = 75%
50
15.00
14.00
13.00
12.00
11.00
0 10.00
0 2 4 6 8 10 12 14 16 18 20
PIN IN WATTS
POUT
GAIN
IV CURVE
F1J5DICEIV
45
40
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1J 5 DICE CAPACITANCE
1000
100
Crss
Coss
Ciss
10
0
100.00
10.00
1.00
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
F1J5DICE ID&GMVsVG
Id
gM
0.10
0 2 4 6 8 10
Vgs in Volts
30
12
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1120
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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