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Polyfet RF Devices
Polyfet RF Devices

F1174 Datasheet Preview

F1174 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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F1174 pdf
polyfet rf devices
F1174
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Military Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
130 Watts Gemini
Laser Driver and others.
"Polyfet"TM process features
Package Style AR
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
HIGH GAIN, LOW NOISE
performance
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
380 Watts
0.45 oC/W
200 oC
-65 oC to 150oC
16 A
70 V
70 V 30V
RF CHARACTERISTICS ( 130 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
10
dB Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
η
VSWR
Drain Efficienc
Load Mismatch Toleranc
55 % Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
20:1 Relative Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Curren
4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.4 A, Vgs = Vds
gM Forward Transconductanc
4 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.35
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
24
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
160 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
120 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

F1174 Datasheet Preview

F1174 Datasheet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

No Preview Available !

F1174 pdf
F1174
180
160
140
120
100
80
60
40
20
0
0
POUT VS PIN GRAPH
F1174 POUT VS PIN F=400
MHZ; IDQ=1.6A; VDS=28.0V
Efficiency = 55%
5 10 15
PIN IN WATTS
20
POUT
12.50
12.00
11.50
11.00
10.50
10.00
9.50
9.00
8.50
8.00
25
GAIN
IV CURVE
F1J4DICEIV
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
CAPACITANCE VS VOLTAGE
F1J 4 DICE CAPACITANCE
1000
Ciss
100
Coss
Crss
10
1
0
100.00
10.00
1.00
5 10 15 20 25
VDS IN VOLTS
ID AND GM VS VGS
F1J4DICE ID&GMVsVG
Id
gM
30
0.10
0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number F1174
Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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