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Polyfet RF Devices
Polyfet RF Devices

L125 Datasheet Preview

L125 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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L125 pdf
polyfet rf devices
L125
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
15.0 Watts Single Ended
Package Style SO8 -1
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
3.0 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 15.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
12
55
dB Idq = 0.40 A, Vds = 28.0 V, F = 1,000MHz
% Idq = 0.40 A, Vds = 28.0 V, F = 1,000 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.40 A, Vds = 28.0 V, F =1,000MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 0.10 mA, Vgs = 0V
1.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.90
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
5.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com



Polyfet RF Devices
Polyfet RF Devices

L125 Datasheet Preview

L125 Datasheet

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

No Preview Available !

L125 pdf
L125
POUT VS PIN GRAPH
L125 POUT VS PIN F=1000 MHZ; IDQ=0.4A; VDS=28V
22
20
18
16
14
12
10
8
6
0
6
Efficiency = 55%
0.2 0.4 0.6 0.8
1
PIN IN WATTS
1.2 1.4 1.6 1.8
POUT
IV CURVE
L2A 1 DICE IV
16.00
14.00
12.00
10.00
8.00
2
GAIN
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
VDSINVOLTS
vg=2v
Vg=4v
Vg=6v
vg=8v
vg=10v
vg=12v
S11 & S22 SMITH CHART
100
10
1
0.1
0
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
Coss
Crss
Ciss
5 10 15 20 25 30
VDS IN VOLTS
ID & GM VS VGS
L2B 1 DIE ID, GM vs VG
10 ID
1
GM
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 03/08/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Part Number L125
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Maker Polyfet RF Devices
Total Page 2 Pages
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