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QL65I7S-A-H Datasheet Preview

QL65I7S-A-H Datasheet

LASER DIODE

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QL65I7S-A-H pdf
QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65I7S-A/B/C-H
Signature of Approval
Approved by
Checked by
Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup,
Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com



QSI
QSI

QL65I7S-A-H Datasheet Preview

QL65I7S-A-H Datasheet

LASER DIODE

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QL65I7S-A-H pdf
QL65I7S-A/B/C-H
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver. 2 Mar.2012
OVERVIEW
QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well
structure. It's an attractive light source, with a typical light output power of 35Mw for
optoelectronic devices such as DVD-RAM and Industrial Sensor.
APPLICATION
- Industrial Sensor
- DVD-RAM
FEATURES
- Visible Light Output : λp = 658 nm(Typ.)
- Optical Power Output : 35mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1)
B LD , PD anode (Fig. 2)
C LD anode, PD cathode (Fig. 3)
Fig. 1
QL65I7SA-H
Fig. 2
QL65I7SB-H
Fig. 3
QL65I7SC-H


Part Number QL65I7S-A-H
Description LASER DIODE
Maker QSI
Total Page 5 Pages
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