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QL65J7S-B Datasheet Preview

QL65J7S-B Datasheet

LASER DIODE

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QL65J7S-B pdf
QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65J7S-A/B/C
Signature of Approval
Approved by
Checked by
Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup,
Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com



QSI
QSI

QL65J7S-B Datasheet Preview

QL65J7S-B Datasheet

LASER DIODE

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QL65J7S-B pdf
QL65J7S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
Ver 0 JAN. 2007
OVERVIEW
QL65J7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 50mW for optoelectronic devices
such as DVD R/RW
APPLICATION
- DVD R/RW
- Optical Module
FEATURES
- Visible Light Output : λp = 660 nm(typ.)
- Optical Power Output : 50mW CW
- Package Type
: TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1)
B LD , PD anode (Fig. 2)
C LD anode, PD cathode (Fig. 3)
Fig. 1
QL65J7SA
Fig. 2
QL65J7SB
Fig. 3
QL65J7SC


Part Number QL65J7S-B
Description LASER DIODE
Maker QSI
Total Page 5 Pages
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