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QL65L6S-C Datasheet Preview

QL65L6S-C Datasheet

LASER DIODE

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QL65L6S-C pdf
QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65L6S-A/B/C Tentative
Signature of Approval
Approved by
Checked by
Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup,
Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com



QSI
QSI

QL65L6S-C Datasheet Preview

QL65L6S-C Datasheet

LASER DIODE

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QL65L6S-C pdf
QL65L6S-A/B/C
InGaAlP Laser Diode
Tentative
Quantum Semiconductor International Co., Ltd.
Ver. 1 Aug. 2006
OVERVIEW
QL65L6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of CW 80mW and pulse 160mW
- for optical storage devices such as High Power Laser Modules.
APPLICATION
- High Power Laser Modules
- Medical Applications
- Portable High Density Optical Disc Drives
FEATURES
- Visible Light Output
- Optical Power Output
- Package Type
: λp = 660 nm
: 80mW CW
: TO-18 (5.6mmφ)
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathode, PD anode (Fig. 1)
B LD , PD anode (Fig. 2)
C LD anode, PD cathode (Fig. 3)
Fig. 1
QL65L6SA
Fig. 2
QL65L6SB
Fig. 3
QL65L6SC


Part Number QL65L6S-C
Description LASER DIODE
Maker QSI
Total Page 5 Pages
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