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BC846 Datasheet Preview

BC846 Datasheet

NPN Silicon Planar Epitaxial Transistors

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BC846 pdf
NPN Silicon Planar Epitaxial Transistors
BC846
BC847
BC848
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
SOT-23 SMD Package
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emmitter Voltage (VBE = 0V)
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current - Peak
Emitter Current - Peak
Base Current - Peak
Total power dissipation up to
Tamb = 25 oC
Storge Temperature
Junction Temperature
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
-IEM
IBM
Ptot**
Tstg
Tj
BC846
80
80
65
6
Thermal Resistance
From junction to ambient
Rth(j-a)**
**Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm
BC847
50
50
45
6
100
200
200
200
250
-55 to +150
150
500
BC848
30
30
30
5
UNITS
V
V
V
V
mA
mA
mA
mW
oC
oC
K/W
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RECTRON
RECTRON

BC846 Datasheet Preview

BC846 Datasheet

NPN Silicon Planar Epitaxial Transistors

No Preview Available !

BC846 pdf
BC846
BC847
BC848
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
DESCRIPTION
Collector Cut Off Current
SYMBOL TEST CONDITION
ICBO
VCB = 30V, IE = 0
VCB = 30V, IE = 0, Tj = 150oC
Base Emitter On Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current Gain
VBE(on)*
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE(Sat)
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
VBE(Sat)***
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
hFE IC = 10uA, VCE = 5V
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
MIN TYP MAX
15
4
0.58 0.7
0.77
0.25
0.60
0.7
0.9
UNITS
nA
uA
V
V
V
90
150
270
IC = 2mA, VCE = 5V
BC846
BC847/BC848
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
Collector Capacitance
Transition Frequency
Small Signal Current Gain
CC
fT
| hfe |
IE = ie = 0, VCB = 10V, f = 1MHZ
IC = 10mA, VCB = 5V, f = 100MHZ
IC = 2mA, VCE = 5V, f= 1kHZ
BC856
BC857/BC858
BC846A/BC847A/BC848A
BC846B/BC847B/BC848B
BC847C/BC848C
Noise Figure
NF IC = 0.2mA, VCE = 5V
RS= 2k ohm, f = 1KHZ, B= 200HZ
*VBE (on) decreases by about 2mV/K with increase temperature.
***VBE (Sat) decreases by about 1.7mV/K with increase temperature.
110 450
110 800
110 220
200 450
420 800
2.5
100
125 500
125 900
125 260
240 500
450 900
10
pF
MHZ
dB
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Part Number BC846
Description NPN Silicon Planar Epitaxial Transistors
Maker RECTRON
Total Page 2 Pages
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