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D10040200PL1 Datasheet Preview

D10040200PL1 Datasheet

45-1000MHz GaAs/GaN PWR DBLR HYBRID

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D10040200PL1 pdf
D10040200P
L1 45-
1000 MHz
GaAs/GaN Pwr
Dblr Hybrid
D10040200PL1
www.DataSheet4U.com
45-1000MHz GaAs/GaN PWR DBLR HYBRID
Package: SOT-115J
Product Description
The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part
employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to
1000MHz. It provides high output capability, excellent linearity, and supe-
rior return loss performance with low noise and optimal reliability.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
INPUT
+VB
OUTPUT
Features
Low Current
Excellent Linearity
Superior Return Loss Perfor-
mance
Extremely Low Distortion
Optimal Reliability
Extremely Low Noise
Unconditionally Stable Under
All Terminations
High Output Capability
20.0dB Min. Gain at 1GHz
380mA Max. at 24VDC
Applications
45MHz to 1000MHz CATV
Amplifier Systems
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Overall
VB= 24V; TMB=30°C; ZS=ZL=75
Power Gain
18.5
19.0
19.5
dB f=45MHz
20.0
20.5
21.5 dB f=1000MHz
Slope [1]
1.0 1.5 2.5 dB f=45MHz to 1000MHz
Flatness of Frequency Response
0.8 dB f=45MHz to 1000MHz (Peak to Valley)
Input Return Loss
20
dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
16 dB f=870MHz to 1000MHz
Output Return Loss
20
dB f=45MHz to 320MHz
19 dB f=320MHz to 640MHz
18 dB f=640MHz to 870MHz
17 dB f=870MHz to 1000MHz
Noise Figure
3.0 4.0 dB f=50MHz to 1000MHz
Total Current Consumption (DC)
370.0
380.0
mA
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
DS091124
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 4



RF Micro Devices
RF Micro Devices

D10040200PL1 Datasheet Preview

D10040200PL1 Datasheet

45-1000MHz GaAs/GaN PWR DBLR HYBRID

No Preview Available !

D10040200PL1 pdf
D10040200PL1
www.DataSheet4U.com
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Tempera-
ture
Rating
65
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Distortion data 40MHz to
550 MHz
VB=24V, TMB=30°C, ZS=ZL=75
CTB -70 -67 dBc 79 ch 7dB tilted; VO=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)[2]
XMOD
-65 -62 dBc 79 ch 7dB tilted; VO=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)[2]
CSO -71 -68 dBc 79 ch 7dB tilted; VO=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)[2]
CIN
59 63
dB 79 ch 7dB tilted; VO=50dBmV at 550MHz, plus
75 digital channels (-6dB offset)[2]
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.
Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-
rier being tested.
Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test Procedure for Carrier to Noise)
2 of 4
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS091124


Part Number D10040200PL1
Description 45-1000MHz GaAs/GaN PWR DBLR HYBRID
Maker RF Micro Devices
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