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RF3928 Datasheet Preview

RF3928 Datasheet

300W GaN Wide-Band Pulsed Power Amplifier

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RF3928 pdf
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Package: Flanged Ceramic, 2 pin
Features
Wideband Operation 2.8GHz to 3.4GHz
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Optimized Evaluation Board Layout for
50ohm Operation
Integrated matching components for high
terminal impedances
50V Operation Typical Performance
o Pulsed Output Power 300W
o Small Signal Gain 11dB
o Drain Efficiency 50%
o -40oC to 85oC Operating Temperature
Applications
Radar
Air Traffic Control and Surveillance
General Purpose Broadband Amplifiers
RF IN
VG
Pin 1 (CUT )
RF OUT
VD
Pin 2
GND
BASE
Functional Block Diagram
Product Description
The RF3928 is a 50V 300W high power discrete amplifier designed for S-Band pulsed
radar, Air Traffic Control and Surveillance and general purpose broadband amplifier
applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor
process, these high-performance amplifiers achieve high output power, high efficiency and
flat gain over a broad frequency range in a single package. The RF3928 is a matched GaN
transistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissipation
technologies. Ease of integration is accomplished through the incorporation of simple,
optimized matching networks external to the package that provide wideband gain and
power performance in a single amplifier
Ordering Information
RF3928
300W GaN Wide-Band Pulsed Power Amplifier
RF3928PCBA-410 Fully Assembled Evaluation Board Optimized for 2.8-3.5GHz; 50V
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
GaAs pHEMT
Si BiCMOS
Si CMOS
SiGe HBT
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
1 of 10
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com



RF Micro Devices
RF Micro Devices

RF3928 Datasheet Preview

RF3928 Datasheet

300W GaN Wide-Band Pulsed Power Amplifier

No Preview Available !

RF3928 pdf
Proposed
RF3928
300W GaN WIDE-BAND PULSED POWER AMPLIFIER
Absolute Maximum Ratings
Parameter
Drain Source Voltage
Gate Source Voltage
Rating
150
-5 to +2
Unit
V
V
Gate Current (Ig)
155 mA
Operational Voltage
50 V
Ruggedness (VSWR)
3:1
Storage Temperature Range
-55 to +125
0C
Operating Temperature Range (TL)
-40 to +85
0C
Operating Junction Temperature (TJ)
200 0 C
Human Body Model
Class 1A
MTTF (TJ < 200 0 C)
3.0E + 06
Hours
Thermal Resistance, Rth (junction to case)
TC =850C, DC bias only
TC =850C, 100mS pulse, 10% duty cycle
0.89
0.27
0 C/W
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product
qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must
not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C
Parameter
Specification
Min. Typ.
Recommended Operating Conditions
Drain Voltage (Vdsq)
Gate Voltage (Vgsq)
Drain Bias Current
-5 -3
440
Frequency of Operation
2800
Capacitance
Crss TBD
Ciss TBD
Coss
TBD
DC Functional Test
Ig (off) – Gate Leakage
Id (off) – Drain Leakage
Vgs (th) – Threshold Voltage
-4.2
Vds (on) – Drain Voltage at high current
0.13
RF Functional Test
Small Signal Gain
12
Power Gain
9 9.9
Input Return Loss
Output Power
54 54.9
Drain Efficiency
45 53
and TC = TCASE
Max.
Unit
50
-2
3400
V
V
mA
MHz
pF
pF
pF
2 mA
2.5 mA
V
V
dB
dB
-5.5 dB
dBm
%
Condition
Vg= -8V, Vd = 0V
Vg= -8V, Vd = 0V
Vg= -8V, Vd = 0V
Vg = -8V, Vd = 0V
Vg = -8V, Vd = 36V
Vd = 36V, Id = 40mA
Vg = 0V, Id = 1.5A
f=2800MHz, Pin = 30dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
f=2800MHz, Pin = 30dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
f=2800MHz, Pin = 45dBm [1,2]
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
12 dB f=3100MHz, Pin = 30dBm [1,2]
9 9.5
dB f=3100MHz, Pin = 45dBm [1,2]
-5.5 dB f=3100MHz, Pin = 30dBm [1,2]
54 54.5
dBm
f=3100MHz, Pin = 45dBm [1,2]
45 56
% f=3100MHz, Pin = 45dBm [1,2]
Small Signal Gain
Power Gain
Input Return Loss
Output Power
Drain Efficiency
RF Typical Performance
Frequency Range
Small Signal Gain
Power Gain
Gain Variation with Temperature
Output Power (Psat)
Drain Efficiency
9
54
45
2800
10
9.3
54.3
52
11
10
54.7
300
48
-5.5
3400
-0.015
dB
dB
dB
dBm
%
MHz
dB
dB
dB/0 C
dBm
W
%
f=3400MHz, Pin = 30dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
f=3400MHz, Pin = 30dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
f=3400MHz, Pin = 45dBm [1,2]
f=3200MHz, Pin = 30dBm [1,2]
Pout = 54.7dBm [1,2]
At peak output power [1,2]
Peak output power [1,2]
Peak output power [1,2]
At peak output power [1,2]
[1] Test Conditions: Pulsed Operation, PW=100usec, DC=10%, Vds=50V, Idq=440mA, T=25ºC
[2] Performance in a standard tuned test fixture
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and
registered trademarks are the property of their respective owners. ©2009, RF Micro Devices, Inc.
Prelim DS100928
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
2 of 10
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com


Part Number RF3928
Description 300W GaN Wide-Band Pulsed Power Amplifier
Maker RF Micro Devices
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