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SUF-1033 Datasheet Preview

SUF-1033 Datasheet

Cascadable PHEMT MMIC Amplifier

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SUF-1033 pdf
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SUF-1033DC
to 20GHz, Cas-
cadable
pHEMT MMIC
Amplifier
SUF-1033
DC to 20GHz, CASCADABLE pHEMT MMIC
AMPLIFIER
Package: QFN, 16-Pin, 3mmx3mm
Product Description
The SUF-1033 is a monolithically matched broadband high IP3 gain block
covering DC to 20GHz. This pHEMT based amplifier uses a patented self-
bias network that operates from a single 5V supply. It offers efficient cas-
cadable performance in a compact 3mmx3mm Ceramic QFN package. It
is well suited for RF LO and IF driver applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ Broadband Flat Gain=10dB
„ P1dB=14dBm at 2GHz
„ 5V Single Supply Operation
„ Low Gain Variation vs. Tem-
perature
„ 50Ω I/O Low-Noise, Efficient
Gain Block
Applications
„ Broadband Communications
„ Test Instrumentation
„ Military and Space
„ LO and IF Mixer Applications
„ High IP3 RF Driver Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
DC
18 GHz
Small Signal Power Gain
10.2
dB Freq=3GHz
9.5 dB Freq=9GHz
7.4 dB Freq=18GHz
Output Power at 1dB Compression
13.8
dBm Freq=3GHz
13.7
dBm Freq=9GHz
13.2
dBm Freq=18GHz
Output Third Order Intercept Point
26.1
dBm Freq=3GHz
24.3
dBm Freq=9GHz
22.9
dBm Freq=18GHz
Input Return Loss
15.8
dB Freq=3GHz
13.8
dB Freq=9GHz
7.6 dB Freq=18GHz
Output Return Loss
13.6
dB Freq=3GHz
13.7
dB Freq=9GHz
27.1
dB Freq=18GHz
Isolation
18.0
dB Freq=3GHz
19.2
dB Freq=9GHz
20.0
dB Freq=18GHz
Device Operating Voltage
3.4 V With 33Ω resistor between VD and VDD
Test Conditions: Z0=50Ω, VS=5V, ID=46mA, RBIAS=33Ω, T=25°C, OIP3 Tone Spacing=1MHz with POUT per tone=0dBm. Circuit Board Data with Bias
Tees.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS090528
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6



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SUF-1033 Datasheet Preview

SUF-1033 Datasheet

Cascadable PHEMT MMIC Amplifier

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SUF-1033 pdf
SUF-1033
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Absolute Maximum Ratings
Parameter
Rating
Unit
Total Current (lD)
Device Voltage (VD)
Power Dissipation
90
4.2
0.378
mA
V
W
RF Input Power
+20 dBm
Storage Temperature Range
-65 to +150
°C
Operating Temperature Range (TL)
-45 to +85
°C
Operating Junction Temperature (TJ)
+150
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Backside of die
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Device Operating Current
Noise Figure
Thermal Resistance
Min.
Specification
Typ.
47
4.6
4.8
5.8
146
Max.
Unit
mA
dB
dB
dB
°C/W
Condition
Freq = 3 GHz
Freq = 9 GHz
Freq = 18 GHz
Junction to backside
Typical Performance (Circuit Board Data with Bias Tees) VS=5V, RBIAS=33Ω, T=25°C, Z=50Ω
Parameter
Units 500MHz 3GHz 9GHz 12GHz 15GHz
Small Signal Gain
dB
10.5
10.2
9.5
8.0
8.6
Output 3rd Order Intercept Point (see
note 1)
dBm
27.4
26.1
24.3
21.2
21.6
Output Power at 1dB Compression
dBm
14.3
13.8
13.7
11.2
12.1
Input Return Loss
dB
26.1
15.8
13.8
7.4
25.3
Output Return Loss
dB
18.8
13.6
13.7
6.1
9.5
Reverse Isolation
dB
17.6
17.9
19.0
20.2
19.1
Noise Figure
dB 5.4 4.6 4.8 4.7 4.8
Note 1: 0dBm/tone, 1MHz tone spacing
18 GHz
7.4
22.9
13.2
7.6
27.1
19.5
5.8
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A0 DS090528


Part Number SUF-1033
Description Cascadable PHEMT MMIC Amplifier
Maker RF Micro Devices
Total Page 6 Pages
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