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SUF-5033 Datasheet Preview

SUF-5033 Datasheet

Cascadable PHEMT MMIC Amplifier

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SUF-5033 pdf
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SUF-5033Low
Noise, High
Gain SiGe HBT
SUF-5033
0.1GHZ TO 4.0GHZ, CASCADABLE PHEMT
MMIC AMPLIFIER
Package: QFN, 16-Pin, 3mmx3mm
Product Description
The SUF-5033 is a monolithically matched broadband high IP3 gain block
covering 0.1GHz to 4.0GHz. This pHEMT FET-based amplifier uses a pat-
ented self-bias Darlington topology featuring a gain and temperature com-
pensating active bias network that operates from a single 5V supply. It
offers efficient, cascadable performance in a compact 3mmx3mm
Ceramic QFN package. It is well-suited for RF, LO, and IF driver applica-
tions.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Features
„ Broadband Performance
„ High Gain=18.5dB at 2GHz
„ P1dB=20.5dBm at 2GHz
„ 50Ω I/O Low-Noise, Efficient
Gain Block
„ 5V Operation, No Dropping
Resistor
„ Low Gain Variation versus
Temperature
„ Patented Self-Bias Darlington
Circuit
Applications
„ Broadband Communications
„ Test Instrumentation
„ Military and Space
„ LO and IF Mixer Applications
„ High IP3 RF Driver Applica-
tions
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
0.1
4.0 GHz
Small Signal Power Gain
16.0
18.5
dB 2GHz
16.0
dB 4GHz
Output Power at 1dB Compression
21.0
dBm 2GHz
21.5
dBm 4GHz
Output Third Order Intercept Point
27.6
dBm 2GHz
27.9
dBm 4GHz
Noise Figure
3.6 dB 2GHz
4.0 dB 4GHz
Input Return Loss
-10.3
dB 2GHz
-11.1
dB 4GHz
Output Return Loss
-19.0
dB 2GHz
-23.8
dB 4GHz
Reverse Isolation
-24.0
dB 2GHz
-23.0
dB 4GHz
Device Operating Voltage
5.0 V
Device Operating Current
90 mA
Gain Variation vs. Temperature
-0.01
dB/°C
Thermal Resistance
100
°C/W
junction to backside
Test Conditions: V=5V, ID=90mA OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50Ω, 25°C, With Bias Tees
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS090605
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6



RF Micro Devices
RF Micro Devices

SUF-5033 Datasheet Preview

SUF-5033 Datasheet

Cascadable PHEMT MMIC Amplifier

No Preview Available !

SUF-5033 pdf
SUF-5033
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Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power
110 mA
5.5 V
20 dBm
Max Dissipated Power
605 mW
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
-65 to +150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Backside of die
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance (Circuit Board Data with Bias Tees) VS=5V, RBIAS=20Ω, T=25°C, Z=50Ω
Parameter
Units 200MHz 500MHz 1GHz 2GHz
Small SIgnal Gain
dB
20.1
19.9
19.6
18.5
Output 3rd Order Intercept Point (see note 1)
dBm
28.5
27.6
Output Power at 1dB Compression
dBm
21.2
21.4
21.5
21.0
Input Return Loss
dB
16.6
16.0
14.0
10.3
Output Return Loss
dB
16.9
17.5
18.7
19.0
Reverse Isolation
dB
24.6
24.6
24.6
24.5
Noise Figure
dB
3.0 3.6
Note 1: 0dBm/tone, 1MHz tone spacing
4 GHz
16.2
27.9
21.5
11.1
23.8
23.2
4.0
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A0 DS090605


Part Number SUF-5033
Description Cascadable PHEMT MMIC Amplifier
Maker RF Micro Devices
Total Page 6 Pages
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