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Rohm Semiconductor Electronic Components Datasheet

QH8KA1 Datasheet

MOSFET

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QH8KA1 pdf
QH8KA1
  30V Nch+Nch Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
30V
73mΩ
±4.5A
2.4W
lFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
lOutline
TSMT8
 
 
      
lInner circuit
   Datasheet
      
 
 
 
      
lPackaging specifications
Packing
Embossed
Tape
lApplication
Reel size (mm)
180
Switching
Motor Drive
Type Tape width (mm)
Basic ordering unit (pcs)
8
3000
Taping code
TR
Marking
KA1
lAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
ID*1 ±4.5 A
Pulsed drain current
ID,
*2
pulse
±12
A
Gate - Source voltage
VGSS
±20 V
Avalanche energy, single pulse
EAS*3
0.65 mJ
Avalanche current
IAS*3 3 A
Power dissipation
PD*1 2.4
total
PD*4 1.5 W
element
PD*4
1.25
Junction temperature
Tj 150
Range of storage temperature
Tstg
-55 to +150
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150730 - Rev.002    


Rohm Semiconductor Electronic Components Datasheet

QH8KA1 Datasheet

MOSFET

No Preview Available !

QH8KA1 pdf
QH8KA1
          
lThermal resistance
Parameter
Thermal resistance, junction - ambient
                Datasheet
                       
Symbol
RthJA*4
Values
Min. Typ. Max.
- 83.3 -
Unit
lElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
   
Unit
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
30 - - V
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Transconductance
 ΔV(BR)DSS ID = 1mA
   ΔTj    referenced to 25
IDSS VDS = 30V, VGS = 0V
IGSS VDS = 0V, VGS = ±20V
VGS(th) VDS = VGS, ID = 1mA
 ΔVGS(th)  ID = 1mA
   ΔTj    referenced to 25
RDS(on)*5
gfs*5
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.0A
VDS = 5V, ID = 3A
- 21 - mV/
- - 1 μA
- - ±100 nA
1.0 - 2.5 V
- -3 - mV/
- 56 73
- 86 112
1.7 - - S
*1 Pw 1s, Limited only by maximum temperature allowed.
*2 Pw 10μs, Duty cycle 1%
*3 L 0.1mH, VDD = 15V, RG = 25Ω, STARTING Tch = 25Fig.3-1,3-2
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Pulsed
                                                                                               
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150730 - Rev.002


Part Number QH8KA1
Description MOSFET
Maker ROHM
Total Page 12 Pages
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