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MMBT5550 Datasheet Preview

MMBT5550 Datasheet

NPN Transistor

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MMBT5550 pdf
MMBT5550
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM: 0.225 W(Tamb=25OC)
* Collector current
ICM: 0.6 A
* Collector-base voltage
V(BR)CBO: 160 V
* Operating and storage junction temperature range
TJ,Tstg: -55 OC to + 150OC
MECHANICA DATA
*Case: Molded plastic
*Epoxy: UL 94V-O rate flame retardant
*Lead: MIL-STD-202E method 208C guaranteed
*Mounting position: Any
*Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS (@ TA = 25OC unless otherwise noted)
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS (@ TA = 25OC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Thermal Resistance Junction to Ambient
RQJA
Notes : 1. Alumina=0.4*0.3*0.024 in. 99.5% alumina.
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
SOT-23
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) 1
0.071(1.80)
0.118(3.00)
3 0.110(2.80)
2
Dimensions in inches and (millimeters)
MIN.
-
VALUE
225
150
-55 to +150
TYP.
-
UNITS
mW
oC
oC
MAX.
417
UNITS
oC/W
2007-5



Rectron
Rectron

MMBT5550 Datasheet Preview

MMBT5550 Datasheet

NPN Transistor

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MMBT5550 pdf
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (IC= 1.0mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= 100 uAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC= 0)
Collector Cutoff Current (VCB= 100Vdc, IE= 0)
(VCB= 100Vdc, IE= 0, TA= 100OC)
Emitter Cutoff Current (VEB= 4.0Vdc, IC= 0)
ON CHARACTERISTICS
DC Current Gain (IC= 1.0mAdc, VCE= 5.0Vdc)
(IC= 10mAdc, VCE= 5.0Vdc)
(IC= 50mAdc, VCE= 5.0Vdc)
Collector-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 50mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage (IC= 10mAdc, IB= 1.0mAdc)
(IC= 50mAdc, IB= 5.0mAdc)
Note: Pluse Test : Pluse Width = 300mS, Duty Cycle = 2.0%
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
140
160
6.0
-
-
-
hFE
VCE(sat)
VBE(sat)
60
60
20
-
-
-
-
Max Unit
- Vdc
- Vdc
- Vdc
100 nAdc
100 uAdc
50 nAdc
-
250 -
-
0.15
Vdc
0.25
1.0
1.2 Vdc


Part Number MMBT5550
Description NPN Transistor
Maker Rectron
Total Page 5 Pages
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