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Renesas Electronics Components Datasheet

2SC458 Datasheet

Silicon NPN Epitaxial Transistor

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2SC458 pdf
2SC458, 2SC2308
Silicon NPN Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SA1029 and 2SA1030
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0681-0200
(Previous ADE-208-1043)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SC458
30
30
5
100
–100
200
150
–55 to +150
2SC2308
55
50
5
100
–100
200
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 6


Renesas Electronics Components Datasheet

2SC458 Datasheet

Silicon NPN Epitaxial Transistor

No Preview Available !

2SC458 pdf
2SC458, 2SC2308
Electrical Characteristics
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output
capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE*1
VCE(sat)
VBE
fT
Cob
NF
2SC458
Min Typ Max
30 — —
30 — —
5 ——
— — 0.5
— — 0.5
100 — 500
— — 0.2
— 0.67 0.75
— 230 —
— 1.8 3.5
— 4 10
Small signal input
impedance
hie — 16.5
Small signal voltage
feedback ratio
hre — 70
Small signal current
transfer ratio
hfe — 130
Small signal output
admittance
hoe — 11.0
Note: 1. The 2SC458 is grouped by hFE as follows.
B CD
2SC458
100 to 200 160 to 320 250 to 500
2SC2308
Min Typ Max
55 —
(Ta = 25°C)
Unit Test conditions
V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE =
5 — — V IE = 10 µA, IC = 0
— — 0.5 µA VCB =18 V, IE = 0
— — 0.5 µA VEB = 2 V, IC = 0
160 — 320
VCE = 12 V, IC = 2 mA
— — 0.2 V IC = 10 mA, IB = 1 mA
— 0.67 0.75
V VCE = 12 V, IC = 2 mA
— 230 — MHz VCE = 12 V, IC = 2 mA
— 1.8 3.5 pF VCB = 10 V, IE = 0,
f = 1 MHz
— 4 10 dB VCE = 6 V, IC = 0.1 mA,
f = 1 kHz, Rg = 500
— 16.5 —
kVCE = 5V, IC = 0.1mA,
f = 270 Hz
— 70 — × 10–6
— 130 —
— 11.0 —
µS
Rev.2.00 Aug 10, 2005 page 2 of 6


Part Number 2SC458
Description Silicon NPN Epitaxial Transistor
Maker Renesas
Total Page 7 Pages
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2SC458 pdf
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