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Renesas Electronics Components Datasheet

HITK0201MP Datasheet

Silicon N Channel MOS FET Power Switching

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HITK0201MP pdf
HITK0201MP
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 25 mtyp (VGS = 4.5 V, ID = 2.4 A)
Low drive current
High speed switching
2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is “QG”.
Preliminary Datasheet
R07DS0479EJ0100
Rev.1.00
Jun 22, 2011
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
20
12
4.5
15
4.5
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
R07DS0479EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
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Renesas Electronics Components Datasheet

HITK0201MP Datasheet

Silicon N Channel MOS FET Power Switching

No Preview Available !

HITK0201MP pdf
HITK0201MP
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
20
12
0.4
9
Typ
30
38
12
479
106
48
14
53
35
6
4.6
0.9
1.3
0.85
Max
10
1
1.4
39
53
1.1
Preliminary
Unit
V
V
A
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 10 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 2.4A, VGS = 4.5 VNote3
ID = 2.4A, VGS = 2.5 VNote3
ID = 2.4A, VDS = 10 VNote3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 2.4 A
VGS = 4.5 V
RL = 5.50
Rg = 4.7
VDD = 10 V
VGS = 4.5 V
ID = 4.5 A
IF = 4.5 A, VGS = 0 Note3
R07DS0479EJ0100 Rev.1.00
Jun 22, 2011
Page 2 of 6
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Part Number HITK0201MP
Description Silicon N Channel MOS FET Power Switching
Maker Renesas
Total Page 7 Pages
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