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Renesas Electronics Components Datasheet

HITK0302MP Datasheet

Silicon N Channel MOS FET Power Switching

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HITK0302MP pdf
HITK0302MP
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 92 mtyp (VGS = 10 V, ID = 1.3 A)
Low drive current
High speed switching
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “GG”.
1
2
Preliminary Datasheet
R07DS0483EJ0100
Rev.1.00
Jun 22, 2011
3
D
G 1. Source
2 2. Gate
3. Drain
S
1
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(Pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. When using the glass epoxy board (FR-4: 40 40 1 mm)
Ratings
30
20
2.7
5
2.7
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
C
C
R07DS0483EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
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Renesas Electronics Components Datasheet

HITK0302MP Datasheet

Silicon N Channel MOS FET Power Switching

No Preview Available !

HITK0302MP pdf
HITK0302MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage V(BR)DSS 30 — —
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS 20
V IG = 100 A, VDS = 0
Gate to source leak current
IGSS — — 10 A VGS = 16 V, VDS = 0
Drain to source leak current
IDSS — — 1 A VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.0
V VDS = 10 V, ID = 1 mA
Drain to source on state resistance RDS(on)
92 115 mID = 1.3 A, VGS = 10 VNote3
RDS(on)
122 171 mID = 1.3 A, VGS = 4.5 VNote3
Forward transfer admittance
|yfs| 2.1 3.5 —
S ID = 1.3 A, VDS = 10 VNote3
Input capacitance
Ciss — 175 —
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
34
pF f = 1 MHz
Reverse transfer capacitance
Crss
15
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
Gate to source charge
td(on) — 9.5 —
tr — 37 —
ns ID = 1 A, VGS = 10 V,
ns RL = 10 , Rg = 4.7
td(off)
38
ns
tf
— 8.2 —
ns
Qg — 3.3 — nC VDD = 10 V, VGS = 10 V,
Qgs — 0.6 — nC ID = 2.7A
Gate to drain charge
Qgd — 0.5 — nC
Body - drain diode forward voltage
VDF
0.9
V IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
R07DS0483EJ0100 Rev.1.00
Jun 22, 2011
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number HITK0302MP
Description Silicon N Channel MOS FET Power Switching
Maker Renesas
Total Page 7 Pages
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