http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Renesas Electronics Components Datasheet

NP110N03PUG Datasheet

N-CHANNEL POWER MOS FET

No Preview Available !

NP110N03PUG pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N03PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N03PUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP110N03PUG
TO-263 (MP-25ZP)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on) = 1.5 mMAX. (VGS = 10 V, ID = 55 A)
Low Ciss: Ciss = 16400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±110
±440
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 288
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR 62
Repetitive Avalanche Energy Note2
EAR 384
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch 150°C, VDD = 15 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16851EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004


Renesas Electronics Components Datasheet

NP110N03PUG Datasheet

N-CHANNEL POWER MOS FET

No Preview Available !

NP110N03PUG pdf
NP110N03PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(th)
| yfs |
RDS(on)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 55 A
VGS = 10 V, ID = 55 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 15 V, ID = 55 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD = 24 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 110 A
IF = 110 A, VGS = 0 V
Reverse Recovery Time
trr IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
1 µA
±100 nA
2.0 3.0 4.0
V
42 86
S
1.1 1.5 m
16400 24600 pF
1900 2850 pF
1500 2700 pF
60 140 ns
150 380 ns
125 250 ns
32 80 ns
253 380 nC
63 nC
94 nC
0.9 1.5
V
68 ns
96 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16851EJ1V0DS


Part Number NP110N03PUG
Description N-CHANNEL POWER MOS FET
Maker Renesas
Total Page 7 Pages
PDF Download
NP110N03PUG pdf
Download PDF File


Buy Electronic Components




Related Datasheet

1 NP110N03PUG N-CHANNEL POWER MOS FET Renesas
Renesas
NP110N03PUG pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components