MOS FIELD EFFECT TRANSISTOR
NP34N055HLE, NP34N055ILE, NP34N055SLE
N-CHANNEL POWER MOSFET
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
TO-251 (JEITA) / MP-3
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 22 mΩ MAX. (VGS = 5 V, ID = 17 A)
• Low Ciss : Ciss = 2000 pF TYP.
• Built-in gate protection diode
Note Not for new design.
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 88 W
IAS 34 / 27 / 10 A
EAS 11 / 72 / 100 mJ
Tch 175 °C
Tstg –55 to + 175 °C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14154EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.