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Renesas Electronics Components Datasheet

NP84N075DUE Datasheet

N-CHANNEL POWER MOS FET

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NP84N075DUE pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N075EUE, NP84N075KUE
NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP84N075EUE-E1-AY Note1, 2
NP84N075EUE-E2-AY Note1, 2
NP84N075KUE-E1-AY Note1
NP84N075KUE-E2-AY Note1
NP84N075CUE-S12-AZ Note1, 2
NP84N075DUE-S12-AY Note1, 2
NP84N075MUE-S18-AY Note1
NP84N075NUE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
Low input capacitance
Ciss = 5600 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14675EJ4V0DS00 (4th edition)
Date Published October 2007 NS
2002, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.


Renesas Electronics Components Datasheet

NP84N075DUE Datasheet

N-CHANNEL POWER MOS FET

No Preview Available !

NP84N075DUE pdf
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
75
±20
±84
±260
1.8
200
175
55 to +175
19/52/73
333/250/50
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
2 Data Sheet D14675EJ4V0DS


Part Number NP84N075DUE
Description N-CHANNEL POWER MOS FET
Maker Renesas
Total Page 10 Pages
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