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Renesas Electronics Components Datasheet

RJJ0315DPA Datasheet

P Channel Power MOS FET

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RJJ0315DPA pdf
RJJ0315DPA
-30V, -35A, 5.9mmax.
P Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
4321
4
G
5 678
D DDD
Datasheet
R07DS0388EJ0400
Rev.4.00
Mar 22, 2013
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10s, duty cycle 1 %
2. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Tch
Tstg
Ratings
–30
-20/+10
–35
–140
–35
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 1 of 6


Renesas Electronics Components Datasheet

RJJ0315DPA Datasheet

P Channel Power MOS FET

No Preview Available !

RJJ0315DPA pdf
RJJ0315DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
–30
–1.0
Typ
4.8
6.8
50
4300
930
880
48
14
20
21
45
115
71
–0.87
100
Max
0.1
–1
–2.5
5.9
10
–1.13
Unit
V
A
A
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10mA, VGS = 0
VGS = –20,+10V, VDS = 0
VDS = –30V, VGS = 0
VDS = –10V, I D = –1mA
ID = –17.5A, VGS = –10V Note4
ID = –17.5A, VGS = –4.5VNote4
ID = –17.5A, VDS = –10V Note4
VDS = –10V
VGS = 0
f = 1MHz
VDD = –10 V
VGS = –4.5 V
ID = –35 A
VGS = –10V, ID = –17.5A
VDD –10V
RL = 0.57
Rg = 4.7
IF = –35 A, VGS = 0 Note4
IF =–35 A, VGS = 0
diF/ dt = –100A/µs
R07DS0388EJ0400 Rev.4.00
Mar 22, 2013
Page 2 of 6


Part Number RJJ0315DPA
Description P Channel Power MOS FET
Maker Renesas
Total Page 7 Pages
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