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Renesas Electronics Components Datasheet

RJK0234DNS Datasheet

N Channel Power MOS FET

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RJK0234DNS pdf
RJK0234DNS
25V, 35A, 5.8mmax.
N Channel Power MOS FET
High Speed Power Switching
Features
Very high speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
RENESAS Package code: PVSN0008JD-A
(Package name: 8pin HVSON(3333))
5 6 78
4 321
4
G
Preliminary Datasheet
R07DS1073EJ0130
Rev.1.30
May 23, 2013
5 678
D DDD
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
θch-c Note3
Tch
Tstg
Ratings
25
+10,-8
35
140
35
21
55
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
R07DS1073EJ0130 Rev.1.30
May 23, 2013
Page 1 of 6
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Renesas Electronics Components Datasheet

RJK0234DNS Datasheet

N Channel Power MOS FET

No Preview Available !

RJK0234DNS pdf
RJK0234DNS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
25
0.9
Typ
4.8
5.4
80
1050
880
66
0.6
7.3
1.9
1.4
2.8
1.9
13.6
3.3
0.84
10.5
Max
±0.1
1
1.4
5.8
6.8
1470
1.6
1.09
Preliminary
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = +10/-8 V, VDS = 0
VDS = 20 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 17.5 A, VGS = 8 V Note4
ID = 17.5 A, VGS = 4.5 V Note4
ID = 17.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 35 A
VGS = 8 V, ID = 17.5 A
VDD 10 V
RL = 0.57 Ω
Rg = 4.7 Ω
IF = 35 A, VGS = 0 Note4
IF =35 A, VGS = 0
diF/ dt = 500 A/ μs
R07DS1073EJ0130 Rev.1.30
May 23, 2013
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number RJK0234DNS
Description N Channel Power MOS FET
Maker Renesas
Total Page 7 Pages
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