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Renesas Electronics Components Datasheet

RJK03C2DPB Datasheet

Silicon N Channel Power MOS FET

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RJK03C2DPB pdf
RJK03C2DPB
Preliminary
Silicon N Channel Power MOS FET with Schottky Barrier Diode
Power Switching
REJ03G1831-0200
Rev.2.00
Sep 29, 2009
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 1.9 mΩ typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5 678
D DDD
5
1 234
4
G
1, 2, 3
4
5
Source
Gate
Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 μs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
55
220
55
25
62.5
60
2.09
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1831-0200 Rev.2.00 Sep 29, 2009
Page 1 of 6
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Renesas Electronics Components Datasheet

RJK03C2DPB Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

RJK03C2DPB pdf
RJK03C2DPB
Electrical Characteristics
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
1.9
2.5
115
4900
1050
420
0.5
33
13
9
16
17
64
13
0.39
34
Max
±0.5
1
2.5
2.5
3.5
Preliminary
Unit
V
μA
mA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 27.5 A, VGS = 10 V Note4
ID = 27.5 A, VGS = 4.5 V Note4
ID = 27.5 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 55 A
VGS = 10 V, ID = 27.5 A,
VDD 10 V, RL = 0.36 Ω,
Rg = 4.7 Ω
IF = 2 A, VGS = 0 Note4
IF = 55 A, VGS = 0
diF/ dt = 100 A/ μs
REJ03G1831-0200 Rev.2.00 Sep 29, 2009
Page 2 of 6
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Part Number RJK03C2DPB
Description Silicon N Channel Power MOS FET
Maker Renesas
Total Page 7 Pages
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