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Renesas Electronics Components Datasheet

RJK03C5DPA Datasheet

Built in SBD N Channel Power MOS FET

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RJK03C5DPA pdf
RJK03C5DPA
30V, 50A, 2.9mmax.
Built in SBD N Channel Power MOS FET
High Speed Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
Outline
Preliminary Datasheet
R07DS0940EJ0400
Rev.4.00
Mar 22, 2013
RENESAS Package code: PWSN0008DE-A
(Package name: WPAK(3F))
5678
5 678
D DDD
4321
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
50
200
50
20
40
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

RJK03C5DPA Datasheet

Built in SBD N Channel Power MOS FET

No Preview Available !

RJK03C5DPA pdf
RJK03C5DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
2.4
3.3
95
3110
690
310
1.8
22
10
5.8
17
8
58
11
0.39
35
Max
± 0.1
1
2.5
2.9
4.3
4350
3.6
Preliminary
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 25A, VGS = 10 V Note4
ID = 25A, VGS = 4.5 V Note4
ID = 25 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 50 A
VGS = 10 V, ID = 25 A
VDD 10 V
RL = 0.4
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF =50 A, VGS = 0
diF/ dt = 100 A/ s
R07DS0940EJ0400 Rev.4.00
Mar 22, 2013
Page 2 of 6
Free Datasheet http://www.datasheet4u.com/


Part Number RJK03C5DPA
Description Built in SBD N Channel Power MOS FET
Maker Renesas
Total Page 7 Pages
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