MOS FIELD EFFECT TRANSISTOR
N- AND P-CHANNEL POWER MOS FET
The μ PA2791GR is N- and P-channel MOS Field Effect
Transistors designed for switching application.
• Low on-state resistance
N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
P-channel RDS(on)1 = 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A)
RDS(on)2 = 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A)
• Low gate charge
N-channel QG = 10 nC TYP. (VGS = 10 V)
P-channel QG = 8.3 nC TYP. (VGS = −10 V)
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit: mm)
N-channel 1 : Source 1
2 : Gate 1
7, 8 : Drain 1
P-channel 3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ± 0.3
1.27 0.78 MAX.
0.5 ± 0.2
μ PA2791GR-E1-AT Note
μ PA2791GR-E2-AT Note
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. VESD ± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
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Document No. G18207EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
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