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Renesas Electronics Components Datasheet

2SJ79 Datasheet

(2SJ76 - 2SJ79) Silicon P-Channel MOS FET

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2SJ79 pdf
2SJ76, 2SJ77, 2SJ78, 2SJ79
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Silicon P Channel MOS FET
Description
High frequency and low frequency power amplifier, high speed power switching
Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216
Features
Suitable for direct mounting
High forward transfer admittance
Excellent frequency response
Enhancement-mode
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
123
G
S
REJ03G0122-0200
(Previous: ADE-208-1179)
Rev.2.00
Sep 07, 2005
1. Gate
2. Source (Flange)
3. Drain
Rev.2.00 Sep 07, 2005 page 1 of 5


Renesas Electronics Components Datasheet

2SJ79 Datasheet

(2SJ76 - 2SJ79) Silicon P-Channel MOS FET

No Preview Available !

2SJ79 pdf
2SJ76, 2SJ77, 2SJ78, 2SJ79
Absolute Maximum Ratings
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Item
Drain to source voltage
2SJ76
2SJ77
2SJ78
2SJ79
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Symbol
VDSX
VGSS
ID
IDR
Pch
Pch Note 1
Tch
Tstg
Value
–140
–160
–180
–200
±15
–500
–500
1.75
30
150
–45 to +150
(Ta = 25°C)
Unit
V
V
mA
mA
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown
voltage
2SJ76
2SJ77
2SJ78
2SJ79
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Note: 2. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSX –140 — — V VGS = 2 V, ID = –1 mA
–160 — — V
–180 — — V
–200 — — V
V (BR) GSS ±15
V IG = ±10 µA, VDS = 0
VGS (on) –0.2 — –1.5
V ID = –10 mA, VDS = –10 V Note 2
VDS (sat)
— –2.0
V ID = –10 mA, VGS = 0 Note 2
|yfs| 20 35 — mS ID = –10 mA, VDS = –20 V Note 2
Ciss
— 120 —
pF VDS = –10 V, ID = –10 mA,
Crss
— 4.8 — pF f = 1 MHz
Rev.2.00 Sep 07, 2005 page 2 of 5


Part Number 2SJ79
Description (2SJ76 - 2SJ79) Silicon P-Channel MOS FET
Maker Renesas Technology
Total Page 6 Pages
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