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Renesas Electronics Components Datasheet

BCR10KM-12LC Datasheet

Triac Medium Power Use

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BCR10KM-12LC
Triac
Medium Power Use
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI , IRGTI, IRGT : 50 mA
Viso : 2000 V
Outline
TO-220FN
1
23
REJ03G0323-0200
Rev.2.00
Dec.17.2004
The product guaranteed maximum junction
temperature 150°C.
Insulated Type
Planar Passivation Type
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Motor control, Heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
Rev.2.00, Dec.17.2004, page 1 of 7


Renesas Electronics Components Datasheet

BCR10KM-12LC Datasheet

Triac Medium Power Use

No Preview Available !

BCR10KM-12LC pdf
BCR10KM-12LC
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
10
60
15
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 96°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0 mA Tj = 125°C, VDRM applied
On-state voltage
VTM — — 1.8 V Tc = 25°C, ITM = 15 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι VFGTΙ
1.5
V Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ VRGTΙ
1.5
V RG = 330
ΙΙΙ VRGTΙΙΙ
1.5
V
Gate trigger currentNote2 Ι IFGTΙ — — 50 mA Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ IRGTΙ — — 50 mA RG = 330
ΙΙΙ IRGTΙΙΙ
50 mA
Gate non-trigger voltage
Thermal resistance
VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Rth (j-c)
3.7 °C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
— V/µs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
Rev.2.00, Dec.17.2004, page 2 of 7


Part Number BCR10KM-12LC
Description Triac Medium Power Use
Maker Renesas Technology
Total Page 8 Pages
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BCR10KM-12LC pdf
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