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Renesas Electronics Components Datasheet

HAT2206C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2206C pdf
HAT2206C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS (on) = 65 mtyp. (at VGS = 4.5 V)
Low drive current.
High density mounting
1.8 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1238-0500
Rev.5.00
Jan 26, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
12
±8
2
8
2
830
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.5.00 Jan 26, 2006 page 1 of 6


Renesas Electronics Components Datasheet

HAT2206C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2206C pdf
HAT2206C
Electrical Characteristics
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(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Drain to Source breakdown voltage V(BR)DSS 12
V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±8
V IG = ±10 µA, VDS = 0
Gate to Source leakage current
IGSS
±10 µA VGS = ±6.4 V, VDS = 0
Drain to Source leakage current
IDSS
1
µA VDS = 10 V, VGS = 0
Gate to Source cutoff voltage
VGS(th)
0.3
1.2
V VDS = 10 V, ID = 1mA
Drain to Source on state resistance RDS(on)
65
85 mID = 1 A, VGS = 4.5 V Note3
— 81 114 mID = 1 A, VGS = 2.5 V Note3
— 113 170 mID = 1 A, VGS = 1.8 V Note3
Forward transfer admittance
|yfs| 3.5 5.5 —
S ID = 1 A, VGS = 10 V Note3
Input capacitance
Ciss — 260 —
pF VGS = 0, f = 1 MHz,
Output capacitance
Coss
46
pF VDS = 10 V
Reverse transfer capacitance
Crss
22
pF
Total gate charge
Gate to Source charge
Qg — 3.5 — nC VGS = 4.5 V, VDS = 10 V,
Qgs — 0.7 — nC ID =2 A
Gate to Drain charge
Qgd — 0.7 — nC
Turn - on delay time
Rise time
Turn - off delay time
td(on)
4
— ns VGS = 4.5V, ID = 1 A,
tr — 7 — ns VDD = 10 V, RL = 10 ,
td(off)
43
ns Rg = 4.7
Fall time
tf — 3 — ns
Body - Drain diode forward voltage
VDF
0.8 1.1
V IF =2 A, VGS = 0 Note3
Notes: 3. Pulse test
Rev.5.00 Jan 26, 2006 page 2 of 6


Part Number HAT2206C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
Total Page 7 Pages
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