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Renesas Electronics Components Datasheet

HAT2279H Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2279H pdf
HAT2279H
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9.5 mtyp. (at VGS = 10 V)
Lead Free
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
1 234
4
G
5
D
SSS
123
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REJ03G1464-0200
Rev.2.00
Jul 05, 2006
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
80
±20
30
120
30
25
83
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Jul 05, 2006 page 1 of 7


Renesas Electronics Components Datasheet

HAT2279H Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2279H pdf
HAT2279H
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
80
0.8
42
Typ
9.5
11
70
3520
410
160
0.5
60
9.5
9.0
9.5
14.5
56
9.5
0.83
50
Max
±0.5
1
2.3
12
15
1.08
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Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 80 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 30 A
VGS = 10 V, ID = 15 A,
VDD 30 V, RL = 2 ,
Rg = 4.7
IF = 30 A, VGS = 0 Note4
IF = 30 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.2.00 Jul 05, 2006 page 2 of 7


Part Number HAT2279H
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
Total Page 8 Pages
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HAT2279H pdf
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