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Renesas Electronics Components Datasheet

RJK2006DPE Datasheet

Silicon N Channel MOS FET High Speed Power Switching

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RJK2006DPE pdf
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
REJ03G0512-0100
Rev.1.00
Jan.14.2005
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
1
2
RJK2006DPE
3
3 RJK2006DPF
RJK2006DPJ
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
www.DaDtarSahineectu4rUre.cnotm
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
40
100
40
100
27
48.6
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Jan.14.2005, page 1 of 4


Renesas Electronics Components Datasheet

RJK2006DPE Datasheet

Silicon N Channel MOS FET High Speed Power Switching

No Preview Available !

RJK2006DPE pdf
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
200
3.0
15
Typ
26
0.052
Max
1
±0.1
4.5
0.059
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
1800 — pF VDS = 25 V
330 — pF VGS = 0
43 — pF f = 1 MHz
30 — ns ID = 20 A
180 — ns VGS = 10 V
85 — ns RL = 5
100 — ns Rg = 10
43 — nC VDD = 160 V
11 — nC VGS = 10 V
20 — nC ID = 40 A
1.0 1.5 V IF = 40 A, VGS = 0 Note4
150 — ns IF = 40 A, VGS = 0
0.8 — µC diF/dt = 100 A/µs
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Rev.1.00, Jan.14.2005, page 2 of 4


Part Number RJK2006DPE
Description Silicon N Channel MOS FET High Speed Power Switching
Maker Renesas Technology
Total Page 5 Pages
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3 RJK2006DPJ Silicon N Channel MOS FET High Speed Power Switching Renesas Technology
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