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Rohm Semiconductor Electronic Components Datasheet

1SS244 Datasheet

Switching diode

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1SS244 pdf
Diodes
Switching diode
1SS244
1SS244
!Applications
High voltage switching
General purpose rectification
!Features
1) Glass sealed envelope. (MSD)
2) VRM=250V guaranteed.
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE BAND (BLACK)
φ0.4±0.1
29.0±1.0
2.7±0.3
ROHM : MSD
EIAJ :
JEDEC : DO-34
29.0±1.0
φ1.8±0.2
!Absolute maximum ratings (Ta=25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
Isurge
P
Tj
Tstg
Limits
250
220
625
200
1000
300
175
65~+175
Unit
V
V
mA
mA
mA
mW
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF − − 1.5 V IF=200mA
Reverse current
IR − − 10 µA VR=220V
Capacitance between terminals
CT
− − 3 pF VR=0V, f=1MHz
Reverse recovery time
trr − − 75 ns IF=20mA, IR=20mA, RL=50


Rohm Semiconductor Electronic Components Datasheet

1SS244 Datasheet

Switching diode

No Preview Available !

1SS244 pdf
Diodes
1SS244
!Electrical characteristics curves (Ta=25°C)
200 10µ 100˚C
100
50
75˚C
20 1µ
10
5 50˚C
2 100n
1 Ta=25˚C
0.5
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
10n
0
50 100 150 200 250 300 350
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
1.1
1.0
0.9
0.8
0.7
0.6
012345
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between
terminals characteristics
140
IR =10mA
Irr=1mA
120
100
80
60
40
20
0
0 5 10 15 20 25 30 35
FORWARD CURRENT : IF (mA)
Fig.4 Reverse recovery time
characteristics
14
12
10
8
6
4
2
0
1
10 100 1000
PULSE WIDTH : Tw (ms)
Fig.5 Surge current characteristics
0.01µF
D.U.T.
5k
PULSE GENERATOR
OUTPUT 50
50
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit


Part Number 1SS244
Description Switching diode
Maker Rohm
Total Page 2 Pages
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