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Rohm Semiconductor Electronic Components Datasheet

1SS400 Datasheet

Switching diode

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1SS400 pdf
Diodes
Switching diode
1SS400
1SS400
!Applications
High speed switching
!Features
1) Extremely small surface mounting type.(EMD2)
2) High Speed.(trr=1.2ns Typ.)
3) High reliability.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
CATHODE MARK
A
0.3±0.05
0.8±0.05
ROHM : EMD2
EIAJ : SC - 79
JEDEC : SOD - 523
0.12±0.05
0.6±0.1
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
Isurge
Tj
Tstg
Limits
90
80
225
100
500
125
55 ~ +125
Unit
V
V
mA
mA
mA
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
VF
IR
CT
trr
− − 1.2 V IF=100mA
− − 0.1 µA VR=80V
0.72
3.0
pF VR=0.5V , f=1MHz
− − 4 ns VR=6V , IF=10mA , RL=100


Rohm Semiconductor Electronic Components Datasheet

1SS400 Datasheet

Switching diode

No Preview Available !

1SS400 pdf
Diodes
!Electrical characteristic curves (Ta = 25°C)
1 1m
100m
10m
1m
100µ
0.1m
10µ Ta=125°C
1µ
Ta=75°C
100n
Ta=25°C
10n
10µ
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
1n
0 20 40 60 80 100 120
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
1SS400
10
5
2
1
0.5
0.2
0.1
0 2 4 6 8 10 12 14
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between terminals
3
VR=6V
Irr=1/10IR
2
1
0
0 10 20 30
FORWARD CURRENT : IF (mA)
Fig.4 Reverse recovery time
characteristics
100
PULSE
50 Single pulse
20
10
5
2
1
0.1 1 10 100 1 000 10 000
PULSE WIDTH : Tw (ms)
Fig.5 Surge current characteristics
0.01µF
D.U.T.
PULSE GENERATOR
OUTPUT 50
5k
50
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit


Part Number 1SS400
Description Switching diode
Maker Rohm
Total Page 2 Pages
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