http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Rohm Semiconductor Electronic Components Datasheet

2SAR513P Datasheet

Midium Power Transistors

No Preview Available !

2SAR513P pdf
Midium Power Transistors (-50V / -1A)
2SAR513P
Structure
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA)
2) High speed switching
Applications
Driver
Packaging specifications
Package
Type Code
Taping
T100
Basic ordering unit (pieces) 1000
2SAR513P
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
PD *3
Tj
Tstg
-50
-50
-6
-1
-2
0.5
2
150
-55 to 150
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Unit
V
V
V
A
A
W
W
C
C
Dimensions (Unit : mm)
(1) (2) (3)
Abbreviated symbol : MC
Inner circuit (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.12 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

2SAR513P Datasheet

Midium Power Transistors

No Preview Available !

2SAR513P pdf
2SAR513P
Electrical characteristic (Ta = 25C)
Parameter
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector-base breakdown voltage
BVCBO
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
Collector-emitter staturation voltage
IEBO
VCE(sa*t)1
DC current gain
hFE
Transition frequency
fT *1
Min.
-50
-50
-6
-
-
-
180
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 Pulsed
*2 See switching time test circuit
Cob
ton *2
tstg *2
tf *2
-
-
-
-
Data Sheet
Typ.
-
-
-
-
-
-200
-
400
12
40
250
35
Max.
-
-
-
-1
-1
-400
450
-
-
-
-
-
Unit Conditions
V IC= -1mA
V IC= -100μA
V IE= -100μA
A VCB= -50V
A VEB= -4V
mV IC= -500mA, IB= -25mA
- VCE= -2V, IC= -50mA
MHz
VCE= -10V
IE=200mA, f=100MHz
pF
VCB= -10V, IE=0A
f=1MHz
ns
ns
IC= -0.5A,IB1= -50mA,
IB2=50mA,VCC ~_-10V
ns
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.12 - Rev.A


Part Number 2SAR513P
Description Midium Power Transistors
Maker Rohm
Total Page 5 Pages
PDF Download
2SAR513P pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 2SAR513P Midium Power Transistors Rohm
Rohm
2SAR513P pdf
2 2SAR513P5 Middle Power Transistors ROHM
ROHM
2SAR513P5 pdf
3 2SAR513R Middle Power Transistors ROHM
ROHM
2SAR513R pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components