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Rohm Semiconductor Electronic Components Datasheet

DTC114GKA Datasheet

NPN 100mA 50V Digital Transistors

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DTC114GKA pdf
DTC114G series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R
 
Value
50V
100mA
10kΩ
 
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
 an inverter circuit without connecting external
 input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
 with complete isolation to allow negative biasing
 of the input. They also have the advantage of
 completely eliminating parasitic effects.
4) Complementary PNP Types: DTA114G series
5) Lead Free/RoHS Compliant.
lOutline
UMT3
SMT3
  
DTC114GUA
DTC114GKA
SOT-323(SC-70)
SOT-346(SC-59)
                            
lInner circuit
B: BASE
C: COLLECTOR
E: EMITTER
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Part No.
Package
Package
size
DTC114GUA
DTC114GKA
UMT3
SMT3
2021
2928
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T106
180
8
3000
K24
T146
180
8
3000
K24
                                                                                        
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/5
20121023 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

DTC114GKA Datasheet

NPN 100mA 50V Digital Transistors

No Preview Available !

DTC114GKA pdf
DTC114G series
 
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DTC114GUA
DTC114GKA
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
50
50
5
100
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = 50μA
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
BVEBO
ICBO
IEBO
VCE(sat)
hFE
IE = 720μA
VCB = 50V
VEB = 4V
IC / IB = 10mA / 0.5mA
VCE = 5V, IC=5mA
Emitter-base resistance
R
-
Transition frequency
f
*2
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
50 - - V
50 - - V
5- -V
- - 0.5 μA
300 - 580 μA
- - 0.3 V
30 - - -
7 10 13 kΩ
- 250 - MHz
                                            
 
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20121023 - Rev.001


Part Number DTC114GKA
Description NPN 100mA 50V Digital Transistors
Maker Rohm
Total Page 6 Pages
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