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Rohm Semiconductor Electronic Components Datasheet

DTC614TK Datasheet

Digital transistors (built-in resistor)

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DTC614TK pdf
Transistors
DTC614TU / DTC614TK
Digital transistors (built-in resistor)
DTC614TU / DTC614TK
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
IC=600mA.
zStructure
NPN digital transistor
(Built-in resistor type)
zEquivalent circuit
zExternal dimensions (Unit : mm)
UMT3
<SC-70>
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
(1) Emitter
(2) Base
(3) Collector
00.1
(3)
0.3+−00.1
0.15±0.05
Each lead has same dimensions
Abbreviated symbol : R04
SMT3
<SC-59>
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1
+0.2
0.1
0.8±0.1
B
R
R=10k
B : Base
C : Collector
E : Emitter
C
E
(1) Emitter
(2) Base
(3) Collector
(3)
0.4
+0.1
0.05
0.15
+0.1
0.06
Each lead has same dimensions
Abbreviated symbol : R04
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
20
20
12
600
200
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
Rev.A
1/2


Rohm Semiconductor Electronic Components Datasheet

DTC614TK Datasheet

Digital transistors (built-in resistor)

No Preview Available !

DTC614TK pdf
Transistor
DTC614TU / DTC614TK
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current transfer ratio
hFE
Input resistance
R1
Transition frequency
fT
Output "ON" resistance
Transition frequency of the device.
Ron
Min.
20
20
12
820
7
Typ.
40
10
150
0.9
Max. Unit
Conditions
V IC=50µA
V IC=1mA
V IE=50µA
0.5 µA VCB=20V
0.5 µA VEB=12V
150 mV IC / IB=50mA / 2.5mA
2700 VCE=5V, IC=50mA
13 k
MHz VCE=10V, IE= −50mA, f=100MHz
VI=5V, RL=1k, f=1KHz
zPackaging specifications and hFE
Package
UMT3
Type
Packaging type
Code
Taping
T106
Basic ordering unit (pieces) 3000
DTC614TU
DTC614TK
SMT3
Taping
T146
3000
zElectrical characteristic curves
10000
VCE=5V
Ta=100°C
Ta=25°C
Ta= −40°C
1000
100
0.1 1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.1 DC Current Gain vs.
Collector Current
10000 1000
IC / IB=20
Ta=25°C
f=1kHz
RL=1k
1000 100 hFE=250 (5V / 50mA)
100
Ta=100°C
Ta=25°C
Ta= −40°C
10
10
1
1
0.1 1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
0.1
0.1
1 10
INPUT VOLTAGE : VI (V)
100
Fig.3 "ON" resistance vs. Input Voltage
zRon measurement circuit
RL=1k
Ron=
v0
viv0
×RL
Input
vi
100mV
(rms)
f=1kHz
V
Output
v0
vI
Fig.4 Output "ON" resistance (Ron)
measurement circuit
Rev.A
2/2


Part Number DTC614TK
Description Digital transistors (built-in resistor)
Maker Rohm
Total Page 3 Pages
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