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Rohm Semiconductor Electronic Components Datasheet

DTDG14 Datasheet

Digital transistor built in resistor and zener diode Driver 60V/ 1A

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DTDG14 pdf
Transistors
DTDG14GP
Digital transistor (built in resistor and
zener diode) Driver (60V, 1A)
DTDG14GP
!Features
1) High hFE.
(typ. hFE=750 VCE/IC=2V/0.5A)
2) Low saturation voltage,
VCE(sat)=0.4V
(IC/IB=500mA/5mA)
3) Built-in zener diode to protect the
transistor against reverse voltages
when connected to alow load.
!Structure
NPN digital transistor
(with single built resistor and zener
diode)
!External dimensions (Units : mm)
4.5+−00..21
1.6±0.1
1.5−+00..12
ROHM : MPT3
EIAJ : SC-62
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
Abbreviated symbol : E01
0.4−+00..015
(1) Base
(2) Collector
(3) Emitter
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
1 Pw10ms, Duty cycle1/2
2 When mounted on a 40×40×0.7 mm ceramic board.
Limits
60±10
60±10
5
1
2
0.5
2
150
55~+150
Unit
V
V
V
A
A(Pulse) 1
W
2
°C
°C
!Equivalent circuit
(1)
R
(1) : Base
(2) : Collector
(3) : Emitter
(2)
(3)
R=10k


Rohm Semiconductor Electronic Components Datasheet

DTDG14 Datasheet

Digital transistor built in resistor and zener diode Driver 60V/ 1A

No Preview Available !

DTDG14 pdf
Transistors
DTDG14GP
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
50
50
5
300
300
7
Transition frequency of the device
Typ.
10
80
Max.
70
70
0.5
580
0.4
13
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC=50µA
IC=1mA
IE=720µA
VCB=40V
VEB=4V
IC/IB=500mA/5mA
VCE=2V, IC=500mA
VCE=5V, IE=−0.1A, f=30MHz
!Packaging specifications
Package
Packaging type
Code
Part No.
Basic ordering
unit (pieces)
DTDG14GP
MPT3
Taping
T100
1000
!Electrical characteristic curves
10
5
2
1
500m
200m
100m
50m
ICP
DC
P
PW=100mW=s10ms
20m
10m
5m 14W×18l×0.8t(Units : mm)
When mounted on glass epoxy
2m Single pulse
1m
100m 200m 500m 1 2
5 10
20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe operating area
10k
Ta=25°C
5k
2k
1k
500
200 VCE=5V
2V
100 1V
50
20
10
10m 20m 50m 100m200m500m 1
2
5 10
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector
current
10
Ta=25°C
5
2
1
500m
200m
100m
50m
IC/IB=200
100
50
20m
10m
10m 20m 50m 100m 200m 500m 1 2
5
COLLECTOR CURRENT : IC (A)
10
Fig.3 Collector-emitter saturation
voltage vs. collector current


Part Number DTDG14
Description Digital transistor built in resistor and zener diode Driver 60V/ 1A
Maker Rohm
Total Page 2 Pages
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