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Rohm Semiconductor Electronic Components Datasheet

RB085T-40 Datasheet

Schottky barrier diode

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RB085T-40 pdf
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Diodes
Schottky barrier diode
RB085T-40
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
9.9
0.8
10.0
10.0±0.3
    0.1
7.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
1 .1   0.1
φ3.1±0.1
φ1.2
7.2
1.2
1.3
0.8
(1) (2) (3)
2.54±0.5 2.54±0.5
0.7±0.015
7.0
2.6±0.03
0.8
3-φ1.2
ROHM : O220FN
Manufacture date
7.2
RB085T-40
zStructure
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current*1
Forward current surge peak 60Hz1cyc)(*1
Junction temperature
Storage temperature
(*1)Tc=100max. Per chip : Io/2
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
45
40
10
100
150
-40 to +150
Unit
V
V
A
A
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.55
IR - - 200
θjc - - 2.5
Unit
V
µA
/W
Conditions
IF=5A
VR=40V
junction to case
Rev.A
1/3


Rohm Semiconductor Electronic Components Datasheet

RB085T-40 Datasheet

Schottky barrier diode

No Preview Available !

RB085T-40 pdf
Diodes
zElectrical characteristic curves
10
Ta=150℃
Ta=125℃
1
Ta=75℃
0.1
Ta=-25℃
Ta=25℃
100000
10000
1000
100
10
1
0.01
0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
0.1
0.01
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
10 20 30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
40
RB085T-40
1000
100
f=1MHz
10
1
0 10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
530 300 800
520
Ta=25℃
IF=5A
250
Ta=TV2aR=5=2350℃V
VR=n=4300pVcs
n=30pcs
790
780
n=30pcs
770
200
510 760
Ta=25℃
f=1MHz
VR=0V
n=10pcs
500
AVE:504.0mV
490
150
100
AAVVEE:8:2.1702.u3AuA
σ:1.9469uA
50
750
740 AVE:728.1pF
730
720
710
480 0 700
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm 1cyc
8.3ms
AVE:236.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25 IF=0.5A
IR=1A
20 Irr=0.25*IR
n=10pcs
15
10
5 AVE:12.30ns
0
trr DISPERSION MAP
100 Mounted on epoxy board
IM=100mA
IF=1A
10 1ms time
300us
Rth(j-a)
1 Rth(j-c)
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
15
D=1/2 DC
10 Sin(θ=180)
5
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.1
0.001
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0 5 10 15 20
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Rev.A
2/3


Part Number RB085T-40
Description Schottky barrier diode
Maker Rohm
Total Page 4 Pages
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