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Rohm Semiconductor Electronic Components Datasheet

RB085T-90 Datasheet

Schottky barrier diode

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RB085T-90 pdf
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Diodes
Schottky barrier diode
RB085T-90
RB085T-90
zApplications
Switching power supply
zFeatures
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
zStructure
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
Manufacture Date
0.7±0.1
0.05
2.6±0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current*1
Forward current surge peak 60Hz1cyc)(*1
Junction temperature
Storage temperature
(*1)Tc=100max Per chip : Io/2
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Limits
90
90
10
100
150
-40 to +150
Unit
V
V
A
A
zElectrical characteristic (Ta=25°C)
Parameter
Forward characteristics
Reverse characteristics
Thermal impedance
Symbol Min. Typ. Max.
VF - - 0.83
IR - - 150
θjc - - 2.5
Unit
V
µA
/W
Conditions
IF=5A
VR=90V
junction to case
Rev.B
1/3


Rohm Semiconductor Electronic Components Datasheet

RB085T-90 Datasheet

Schottky barrier diode

No Preview Available !

RB085T-90 pdf
Diodes
RB085T-90
zElectrical characteristic curves
10
Ta=150℃
1 Ta=125℃
Ta=75℃
0.1
Ta=25℃
Ta=-25℃
0.01
0.001
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100000
Ta=150℃
10000
Ta=125℃
1000
100
10
1
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0.01
0
10 20 30 40 50 60 70 80
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
90
1000
100
f=1MHz
10
1
0 10 20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
790 200 550
TaT=2a5=25℃
180
IF=10A
780
n=3I0Fpc=s5A
160
n=30pcs
140
770 120
Ta=25℃
VR=90V
n=30pcs
540
530
520
510
Ta=25℃
f=1MHz
VR=0V
n=10pcs
100 500
760 80 490
750
AAVVE:7E1:57.76m6V.6mV
σ:1.7301mV
740
60
40 AVE:14.3uA
20
0
480
470
AVE:498.5pF
460
450
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
0
1000
100
Ifsm 1cyc
8.3ms
AVE:136.0A
IFSM DISRESION MAP
Ifsm
t
30
Ta=25℃
25 IF=0.5A
IR=1A
20 Irr=0.25*IR
n=10pcs
15
10
5
AVE:7.40ns
0
trr DISPERSION MAP
100
Mounted on epoxy board
IF=5A
IM=100mA
time
300us
10 1ms
Rth(j-a)
1000
100
Ifsm
8.3ms 8.3ms
1cyc
10
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
15
D=1/2
10
Sin(θ=180)
DC
1
Rth(j-c)
5
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
0.1
0.001
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0
0 5 10 15
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
20
Rev.B
2/3


Part Number RB085T-90
Description Schottky barrier diode
Maker Rohm
Total Page 4 Pages
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