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Rohm Semiconductor Electronic Components Datasheet

RCD100N20 Datasheet

Drive Nch MOSFET

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RCD100N20 pdf
Data Sheet
10V Drive Nch MOSFET
RCD100N20
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD100N20
Taping
TL
2500
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID *3
IDP *1
IS
ISP *1
IAS *2
EAS *2
PD *4
Tch
Range of storage temperature
Tstg
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Limits
200
30
10
40
10
40
5
7.35
20
150
55 to 150
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
C / W
Inner circuit
1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Rohm Semiconductor Electronic Components Datasheet

RCD100N20 Datasheet

Drive Nch MOSFET

No Preview Available !

RCD100N20 pdf
RCD100N20
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
RDS (on*)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min.
-
200
-
3.25
-
2.1
-
-
-
-
-
-
-
-
-
-
 
Typ.
-
-
-
-
140
4.2
1400
95
45
25
35
40
15
25
9
9
Max.
100
-
10
5.25
182
-
-
-
-
-
-
-
-
-
-
-
Unit Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=200V, VGS=0V
V VDS=10V, ID=1mA
mID=5A, VGS=10V
S VDS=10V, ID=5A
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 100V, ID=5A
ns VGS=10V
ns RL=20
ns RG=10
nC VDD 100V, ID=10A
nC VGS=10V
nC
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5 V Is=10A, VGS=0V
www.DataSheet.co.kr
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number RCD100N20
Description Drive Nch MOSFET
Maker Rohm
Total Page 7 Pages
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