http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Rohm Semiconductor Electronic Components Datasheet

RTF011P02 Datasheet

Drive Pch MOS FET

No Preview Available !

RTF011P02 pdf
www.DataSheet4U.com
Transistors
2.5V Drive Pch MOS FET
RTF011P02
RTF011P02
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF011P02
Taping
TL
3000
zExternal dimensions (Unit : mm)
TUMT3
(1) Gate
(2) Source
(3) Drain
2.0
0.3
(3)
0.85Max.
0.77
0~0.1
(1) (2)
0.65 0.65
1.3
0.17
Abbreviated symbol : WW
zInner circuit
(3)
(1)
1
2
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±12
±1
±4
0.4
4
0.8
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C/W
(1) Gate
(2) Source
(3) Drain
1/2


Rohm Semiconductor Electronic Components Datasheet

RTF011P02 Datasheet

Drive Pch MOS FET

No Preview Available !

RTF011P02 pdf
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − ±10 µA VGS= ±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 20 − − V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= 20V, VGS=0V
Gate threshold voltage
VGS (th) 0.7 − −2.0 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
280 390 mID= 1A, VGS= 4.5V
310 430 mID= 1A, VGS= 4V
570 800 mID= 0.5A, VGS= 2.5V
Forward transfer admittance Yfs 0.7 − − S VDS= 10V, ID= 0.5A
Input capacitance
Ciss
160
pF VDS= 10V
Output capacitance
Coss 35 pF VGS=0V
Reverse transfer capacitance Crss
20 pF f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td (on) 12 ns VDD 15V
tr
td (off)
11
22
ns ID= 0.5A
VGS= 4.5V
ns RL=30
tf 7 ns RG=10
Total gate charge
Qg 2.0 nC VDD 15V VGS= 4.5V
Gate-source charge
Qgs 0.6 nC ID= 1A
Gate-drain charge
Qgd 0.5 nC RL=15RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VSD − − −1.2 V IS= 0.4A, VGS=0V
RTF011P02
2/2


Part Number RTF011P02
Description Drive Pch MOS FET
Maker Rohm
Total Page 3 Pages
PDF Download
RTF011P02 pdf
Download PDF File
RTF011P02 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 RTF011P02 Drive Pch MOS FET Rohm
Rohm
RTF011P02 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components