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Rohm Semiconductor Electronic Components Datasheet

SP8M21 Datasheet

4V Drive Nch + Pch MOSFET

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SP8M21 pdf
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Transistors
4V Drive Nch+Pch MOSFET
SP8M21
SP8M21
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S protection diode.
3) Small and surface mount package (SOP8).
zApplications
Switching
zDimensions (Unit : mm)
SOP8
5.0
0.4
(8) (5)
1.75
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackage specifications
Type
SP8M21
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
zInner circuit
(8) (7) (6) (5)
2 2
1 1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Limits
Tr1 : N-ch Tr2 : P-ch
45 45
20 20
±6.0
±4.0
±24 ±16
1.0 1.0
24 16
2.0
1.4
150
55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
Rev.A 1/7


Rohm Semiconductor Electronic Components Datasheet

SP8M21 Datasheet

4V Drive Nch + Pch MOSFET

No Preview Available !

SP8M21 pdf
Transistors
N-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − 10 µA VGS=20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 45
V ID= 1mA, VGS=0V
Zero gate voltage drain current IDSS − − 1 µA VDS= 45V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA
Static drain-source on-state
resistance
RDS (on)
18 25 mID= 6.0A, VGS= 10V
24 34 mID= 6.0A, VGS= 4.5V
26 37 mID= 6.0A, VGS= 4.0V
Forward transfer admittance Yfs 6.0 − − S VDS= 10V, ID= 6.0A
Input capacitance
Ciss
1400
pF VDS= 10V
Output capacitance
Coss 310 pF VGS=0V
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
175
19
30
72
27
15.4 21.6
3.7
6.5
pF f=1MHz
ns VDD 25V
ns ID= 3.0A
VGS= 10V
ns RL= 8
ns RG=10
nC VDD 25V, VGS= 5V
nC ID= 6.0A
nC RL= 4Ω, RG= 10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD
1.2 V IS= 6.0A, VGS=0V
Pulsed
SP8M21
Rev.A 2/7


Part Number SP8M21
Description 4V Drive Nch + Pch MOSFET
Maker Rohm
Total Page 8 Pages
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